Source: Proceedings ICPS. Conference titles: International Conference on the Physics of Semiconductors. Unidade: FZEA
Subjects: EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTORES
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GOBATO, Yara Galvao et al. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. 2018, Anais.. Montpellier: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo, 2018. Disponível em: http://www.icps2018.org/en/program/abstract. Acesso em: 04 maio 2024.APA
Gobato, Y. G., Galeti, H. V. A., Piton, M. R., Koivusalo, E., Suomalainen, S., Hakkarainen, T., et al. (2018). Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. In Proceedings ICPS. Montpellier: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo. Recuperado de http://www.icps2018.org/en/program/abstractNLM
Gobato YG, Galeti HVA, Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Rodrigues A de G, Pizani PS, Lupo D, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings ICPS. 2018 ;[citado 2024 maio 04 ] Available from: http://www.icps2018.org/en/program/abstractVancouver
Gobato YG, Galeti HVA, Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Rodrigues A de G, Pizani PS, Lupo D, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings ICPS. 2018 ;[citado 2024 maio 04 ] Available from: http://www.icps2018.org/en/program/abstract
